Abstract
In this article, we have experimentally investigated the nanometer thick cubic HfO2 stabilized with 6 mol % Y2O3 (YSH) films deposited by pulsed laser deposition method in detail. Except the excellent dielectric properties, including a significant increase in dielectric constant as high as 27.2, a negative flatband voltage of −0.46 V, and a very small loop hysteresis, the YSH film has also shown an obvious response to magnetic field. The saturation magnetization of about 1.3 A m2 kg−1 and 5.8 A m2 kg−1 is presented from the YSH films at 300 K with parallel and perpendicular magnetic field, respectively, which is 20% and 9% larger than that of pure HfO2 film at corresponding magnetic field. It is an indicative approach to control the dielectric properties of hafnium-based oxide films with electric and/or magnetic operation.
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