Abstract
This paper proposes the characterization, parameter estimation, and modeling of a monolithic cascade, which has been called emitter-switching bipolar transistor (ESBT), suitable for high-voltage applications. Such an innovative device composes of a high-voltage power BJT and low-voltage power MOSFET that are connected in cascade connection, with the MOSFET drain embedded inside the BJT emitter. Being a four-terminal device, the ESBT requires a suitable characterization procedure aimed to identify the main electrical parameters relative to the inner BJT and MOSFET parts. Various test configurations that are needed to characterize the ESBT are presented and discussed. The device has been characterized to derive a behavioral model implemented in the PSpice simulator in order to predict the device performances.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
