Characterization on Geiger-mode operation of deep diffused silicon APDs

Abstract

Avalanche photodiodes (APD) manufactured at RMD are fabricated using deep diffusion processes, resulting in a thick reach-through APD with excellent performance characteristics. These include a high quantum efficiency (<50% for visible photons) and low excess noise (F ~ 2). Due to the structure of the APD, the devices have very low junction capacitance (~0.7pF/mm2). These devices have been made as squares or hexagons on the order of 2-4” dimensionally and require <1000 V for operation. Due to the high operating bias, studies on the Geiger behavior were dismissed. The low capacitance is conducive to developing large-area devices, and the large drift region allows for charge steering toward the high breakdown field region. These results provide initial data on the performance characteristics of RMD’s APDs when operated in Geiger mode. Due to the thickness of these devices, they provide a high gain-bandwidth product for near IR single photon counting. A small area (~4 mm2) APD was biased beyond the reverse bias breakdown voltage (~1700 V at -50 C), where the device showed typical Geigermode behavior with a low dark count rate (<54 kHz at 1700 V at an excess bias of 3 V). The data indicates a uniform response over the diode region, yet due to the large dark currents, the device was only operated to 5 V in excess bias beyond the breakdown voltage. The Geiger probability at 5V excess bias was measured as 3%, which is consistent with simulations that suggest an excess bias of ~300 V is required for 100% Geiger probability.