Abstract
Zinc sulfoselenide epitaxial layers grown on GaAs substrates have been characterized by etch pit density (EPD) and full width at half maximum (FWHM) of double-crystal X-ray rocking curves. EPD was observed on a (100) ZnS x Se 1- x /GaAs surface. The etching solution of 0.04% bromine-methanol at 3°C was found to work well for EPD measurement. EPD on the ZnSe epilayers was about 10 7 cm -2 for the general growth conditions, but was as low as 10 4 cm -2 for lattice-matched ZnS x Se 1- x epitaxial layers which gave the narrowest FWHM of 13.6 arc sec.
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