Characterization of ZnO Nanowire Field Effect Transistors by Fast Hydrogen Peroxide Solution Treatment

Abstract

This study demonstrates a simple and fast method of the operation mode control for ZnO nanowire field effect transistors (FETs) with hydrogen peroxide (H2O2, 10%) solution treatment for 5–10 s. With this H2O2 treatment, the surface of ZnO nanowires was roughened as confirmed by transmission electron microscopy images and the defect level-related emission was increased from photoluminescence (PL) data. Correspondingly, the threshold voltage of H2O2-treated ZnO nanowire FETs shifted to the positive gate bias direction, leading a transition of the operation mode from depletion-mode to enhancement-mode. This H2O2 solution treatment can be a useful method for controlling the operation mode of ZnO nanowire FETs with a wide threshold voltage shift in a few second solution treatment.