Abstract
Zinc telluride (ZnTe) semiconducting thin films were prepared bycathodic electrodeposition on to tin-oxide-coated glass and titaniumsubstrates. Studies revealed that stoichiometric ZnTe films weresynthesized by maintaining the deposition potential, solution pH,zinc concentration, and bath temperature as -1.1 V versus asaturated calomel electrode, 3.5±0.01, 0.15 M, and90 °C respectively. The effect of deposition potential onthe structure of ZnTe films was investigated. The variations of theoptical constants and dielectric constant of ZnTe thin films withwavelength were studied. The surface morphology and filmcomposition were analysed by means of a scanning electron microscopeand energy-dispersive x-ray analysis respectively. It is found thata minimum concentration of Zn2+ ions in the solution bathyielded stoichiometric films with smooth surfaces. Preliminarystudies on photoelectrochemical solar cells based on ZnTe werecarried out and the results are discussed.
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