Abstract
A WSi 0.4 cosputtering process has been developed to provide a gate metallization for GaAs self-aligned MESFET devices. The deposition parameters were optimized to produce films with good interface stability during 800°C n + implant activation anneal. The importance of the amorphous structure to serve as a good diffusion barrier is emphasized. Various analytical methods are employed to characterize the gate metal/GaAs interface. I–V diode measurements were used to characterize contact electrical properties such as barrier height and ideality factor. MESFET's with a very shallow channel implant (10 keV) were fabricated with a K-value of 510 mS/V·mm, thus the good stability of the Schottky contact to GaAs was confirmed.
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