Characterization of vertical‐cavity surface‐emitting laser structures by modulation spectroscopy: A status report

Abstract

AbstractThe present issue of physica status solidi (a) contains contributions from the International Workshop on Modulation Spectroscopy of Semiconductor Structures (MS3), held in Wrocław, Poland, 1–3 July 2004.Editor's Choice is the article by P. J. Klar et al. [1] in which the advantages of these techniques are used to characterize optoelectronic devices. For a vertical‐cavity surface‐emitting laser structure (shown schematically in the lower part) to operate, the emission wavelength λqw of its active region and the cavity mode at λcav of its resonator structure need to coincide. The photomodulated reflectance spectrum (upper left part, bottom) shows clear features at both wavelengths whereas a feature at λqw cannot be distinguished in the corresponding reflectance spectrum (top) due to its complicated photonic nature.The first author, Peter J. Klar is currently a lecturer of Physics at the Philipps‐University of Marburg, Germany. His research interests include the physics of magnetic semiconductors and hybrids for spintronics, of III–N–V semiconductor structures for optoelectronics, and of novel nanostructures ranging from nanomagnetism to applications in catalysis.