Abstract
Recently, solid-phase recrystallization of ultrathin indium antimonide nanocrystals (InSb NCs (films grown on SiO2/Si substrate is very attractive, because of the rapid development of thermal annealing technique. In this study, the recrystallization behavior of 35 nm indium antimonide film was studied. Through X-ray diffraction (XRD) analysis, it is demonstrated that the InSb film is composed of nanocrystals after high temperature rapid thermal annealing. Scanning electron microscopy shows that the film has a smooth surface and is composed of tightly packed spherical grains, the average grain size is about 12.3 nm according to XRD results. The optical bandgap of the InSb NCs film analyzed by Fourier Transform infrared spectroscopy measurement is around 0.26 eV. According to the current-voltage characteristics of the InSb NCs/SiO2/p-Si heterojunction, the film has the rectifying behavior and the turn-on voltage value is near 1 V.
Highlights
Moore’s law has predicted that the number of transistors, which are placed inexpensively on an integrated circuit, doubles approximately every 2 years
The full width at half maximum (FWHM) of each X-ray diffraction (XRD) peak was carefully measured, and the nanocrystals size was calculated by Scherr formula [13]
The average grain size was found to be 14.6 nm. This value matches well with what we have obtained from the XRD measurements (12.3 nm)
Summary
Moore’s law has predicted that the number of transistors, which are placed inexpensively on an integrated circuit, doubles approximately every 2 years. InSb NCs film is grown on SiO2/Si (111) substrate using solid-phase recrystallization by rapid thermal annealing. The remainder of this article is organized as follows At beginning, it describes the detailed deposition process of 35 nm InSb NCs film on SiO2/Si (111) substrate. Structures, optical, and electrical properties of the InSb NCs layer on SiO2/Si are presented. It provides that the NCs film has an average grain size of 12.3 nm, and the optical bandgap of InSb NCs film is about 0.26 eV. The field-effect phenomena were investigated on the XOI heterostructure
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