Abstract
Ultra-fast silicon detectors (UFSD) are a specialized type of radiation detectors based on Low Gain Avalanche Detectors (LGADs) that are designed to have extremely fast response times. This work presents detailed results on the study of 50μm thin-LGADs with different doping concentrations produced by Micron Semiconductors Ltd. A temperature dependent study of electrical characteristics and infrared laser measurements are presented in this work.
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