Abstract
The tunneling currents through ultrathin silicon dioxide films from metal to silicon in the oxide thickness regime between 1.4 and 3.5 nm are characterized using different-metal gates. The energy barrier heights and the effective mass of the silicon dioxide films are determined by the curve fitting of the data calculated by the transfer matrix method with current density–oxide voltage characteristics of metal–oxide–semiconductor (MOS) diodes with aluminum or gold gates. As the oxide thickness decreases, the energy barrier height decreases and the effective mass of the silicon dioxide film increases. The difference in the energy barrier heights between aluminum–oxide and gold–oxide interfaces nearly corresponds to the flatband voltage difference multiplied by the electron charge in the capacitance–voltage curves between MOS diodes with aluminum and gold gates. This makes it possible to precisely characterize tunneling currents by a new different-metal gates method for individually determining the energy barrier heights and the effective mass using the height difference obtained from the flatband voltage difference.
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