Abstract
Thin tungsten silicide films were deposited onto Si(100) wafers from a cold-pressed, vacuum- sintered composite target in a Varian 3180 sputtering system. The films were annealed in a Varian IA-200 rapid isothermal annealer, resulting in high-quality films of ±5% thickness uniformity and a low resistivity of 45 μΩcm. Variation of the film composition is observed when depositing the films with heated or voltage-biased substrates. We conclude that the historical problems associated with composite target preparation of sputtered silicides, i.e., low purity and poor mechanical integrity of the target, have been overcome.
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