Abstract
Characterization of transient processes such as gettering, damage annealing, and rapid thermal treatments is a difficult problem, particularly in terms of identifying and understanding the physical processes involved. In this letter, a technique is described in which the aluminum metal layer in a conventional integrated-circuit structure is replaced by tungsten-silicide (WSi <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ). Since WSi <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> is stable at processing temperatures, this technique allows one to anneal finished devices and to study the effect of single or multiple heat treatments upon device performance. Such devices serve as a vehicle for characterizing and understanding the high-temperature processes. We demonstrate here the stability of WSi <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> during high-temperature anneals and discuss various experiments that such a technique allows.
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