Characterization of titanium oxynitride films deposited by low pressure chemical vapor deposition using amide Ti precursor

Abstract

In this study, we investigate the use of an amide-based Ti-containing precursor, namely tetrakis(diethylamido)titanium (TDEAT) , for TiN x O y film deposition at low temperature. Traditionally, alkoxide-based Ti-containing precursor, such as titanium tetra-isopropoxide (TTIP), along with NH 3 is used for titanium oxynitride (TiN x O y ) film deposition. When TTIP is used, at low temperatures it is difficult to form TiN x O y films with high N/O ratios. In this study, by using TDEAT, TiN x O y films are deposited on H-passivated Si (100) substrates in a cold wall reactor at 300 °C and 106 Pa. Rutherford backscattering spectroscopy analysis shows nitrogen incorporation in the TiN x O y films to be as high as 28 at.%. X-ray photoelectron spectroscopy analysis of as-deposited films confirms the formation of . TiN x O y , while Fourier transform infrared and Raman spectra indicate that the films have amorphous structure. Moreover, there is no detectable bulk carbon impurity and no SiO 2 formation at the TiN x O y /Si interface. Upon annealing the as-deposited films in air at 750 °C for 30 min, they oxidize to TiO 2 and crystallize to form a rutile structure with a small amount of anatase phase. Based on these results, TDEAT appears to be a promising precursor for both TiN x O y and TiO 2 film deposition.