Abstract
AbstractBilayer of TiB2/TiSi2 was deposited by magnetron co-sputtering on silicon and alumina substrates, and this structure was investigated for structural and electrical properties. Substrate bias and annealing in vacuum have been applied to vary the film properties. X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) were used to characterize the structure, and chemical composition was characterized by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Resistivity was measured by four probe method. Diffusion barrier properties were studied by AES. As deposited films are amorphous with resistivities of about 40 μΩcm. Post deposition annealing in vacuum shows that the amorphous titanium boride film is very stable. Crystallization starts above 1000°C as seen by XRD, and the crystallization temperature depends on the thickness of TiB2. TiSi2 C54 forms in the temperature range 586°C - 922°C, when TiB2 still remains in amorphous form. The TiSi2 sublayer serves as an additional effective diffusion barrier, preventing outdiffusion of boron from TiB2 into the Si substrate.
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