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Abstract
Several CdTe crystals doped with vanadium (V) or titanium (Ti) were grown by a vertical Bridgman technique and the Sublimation Travelling Heater Method (STHM). Spatially resolved resistivity measurements were performed using the Time Dependent Charge Measurement (TDCM) method. It is shown that V doping leads to a more homogeneous resistivity distribution in contrast to Ti. Photoinduced Current Transient Spectroscopy (PICTS) has been used to characterize the deep levels. Up to three additional levels are introduced through the doping with transition metals.
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