Abstract
We report a reliable and quick method for detecting threading dislocations (TDs) in GaN epitaxial layers grown on (0 0 0 1) sapphire using aqueous KOH etching maintained at 80 °C for 10 min. Atomic force microscopy characterization of topological profiles associated with etch-pits reveal asymmetric and symmetric surface topologies. It is argued that high and low asymmetric profiles are associated with a and a + c type TDs, whereas symmetric profiles are caused by c type TDs.
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