Abstract
Polycrystalline thin film solar cells with structure ZnO/ZnCdS/CuGaSe2 were fabricated. The absorber layers of CuGaSe2 were prepared by laser assisted evaporation. A multilayer window consisting of reactively evaporated ZnO and sprayed ZnCdS was deposited onto CuGaSe2 to complete the cell; ZnO improves the light coupling and window sheet resistance, and ZnCdS serves as a buffer layer. The electrical and optical properties of the individual layers were studied. The junction behaviour was evaluated using current density-voltage, capacitance-voltage and quantum efficiency measurements, showing that the junction transport is controlled by tunnelling at low temperatures and recombination above room temperature. A conversion efficiency of 5.8% was obtained on an area of 1 cm2 with cell parameters Voc = 700 mV, Jsc = 12.5 mA cm−2 and FF = 0.56 without antireflection coating. The results obtained are presented and the requirements for optimizing the device efficiency are discussed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
