Abstract
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The physical properties of <formula formulatype="inline"><tex>$\hbox{HfO}_{2}$</tex> </formula> and Hf-silicate layers grown by the atomic layer chemical vapor deposition are characterized as a function of the Hf concentration and the annealing temperature. The peaks of Fourier transform infrared spectra at 960, 900, and 820 <formula formulatype="inline"><tex>$\hbox{cm}^{-1}$</tex> </formula> originate from Hf–O–Si chemical bonds, revealing that a Hf-silicate interfacial layer began to form at the <formula formulatype="inline"> <tex>$ \hbox{HfO}_{2}/\hbox{SiO}_{2}$</tex></formula> interface after postdeposition annealing process at 600 <formula formulatype="inline"><tex>$^{\circ}\hbox{C}$</tex> </formula> for 1 min. Moreover, the intensity of the peak at 750 <formula formulatype="inline"><tex>$\hbox{cm}^{-1}$</tex></formula> can indicate the degree of crystallization of <formula formulatype="inline"><tex>$\hbox{HfO}_{2}$</tex> </formula>. The formed Hf-silicate layer between <formula formulatype="inline"> <tex>$\hbox{HfO}_{2}$</tex></formula> and <formula formulatype="inline"><tex>$ \hbox{SiO}_{2}$</tex></formula> is also confirmed by X-ray photoelectron spectroscopy. </para>
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