Characterization of the Total Charge and Time Duration for Single-Event Transient Voltage Pulses in a 65-nm CMOS Technology

Abstract

This article presents the circuits and heavy-ion irradiation test results of a single-event transient (SET) measurement chip in a 65-nm complementary metal–oxide–semiconductor (CMOS) technology. The measurements contain two parts: total SET ionization charge and SET pulse duration. Transistors with different types and dimensions were implemented as victim devices to evaluate how transistor parameters impact the SET effects. Additionally, SET variation from different supply voltages was also investigated. The test chip has been tested under a heavy-ion beam with an effective linear energy transfer (LET) from 20.4 to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$88.35~\text {MeV}\cdot \text {cm}^{2}$ </tex-math></inline-formula> /mg using a 0°–45° incidence angle.