Abstract
Nondestructive characterization of high-dose oxygen implanted and 1350 °C annealed silicon-on-insulator structures has been performed by spectroscopic ellipsometry. This method provides a fully in-depth profiling (thickness and nature) of the structure including interfaces. Results have been confirmed by other techniques such as cross-sectional transmission electron microscopy and high-resolution Rutherford backscattering spectroscopy.
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