Abstract
Silicon is the most developed electronic and photonic technological platform and hosts some of the highest-performance spin and photonic qubits developed to date. A hybrid quantum technology harnessing an efficient spin-photon interface in silicon would unlock considerable potential by enabling ultra-long-lived photonic memories, distributed quantum networks, microwave to optical photon converters, and spin-based quantum processors, all linked using integrated silicon photonics. However, the indirect bandgap of silicon makes identification of efficient spin-photon interfaces nontrivial. Here we build upon the recent identification of chalcogen donors as a promising spin-photon interface in silicon. We determined that the spin-dependent optical degree of freedom has a transition dipole moment stronger than previously thought (here 1.96(8) Debye), and the T1 spin lifetime in low magnetic fields is longer than previously thought (> 4.6(1.5) hours). We furthermore determined the optical excited state lifetime (7.7(4) ns), and therefore the natural radiative efficiency (0.80(9) %), and by measuring the phonon sideband, determined the zero-phonon emission fraction (16(1) %). Taken together, these parameters indicate that an integrated quantum optoelectronic platform based upon chalcogen donor qubits in silicon is well within reach of current capabilities.
Highlights
Silicon is the most-developed electronic and photonic technological platform and hosts some of the highest-performance spin and photonic qubits developed to date
A hybrid quantum technology harnessing an efficient spin-photon interface in silicon would unlock considerable potential by enabling ultralonglived photonic memories, distributed quantum networks, microwave-to-optical photon converters, and spin-based quantum processors, all linked with integrated silicon photonics
We determine that the spin-dependent optical degree of freedom has a transition dipole moment stronger than previously thought [here 1.96(8) D], and the spin T1 lifetime in low magnetic fields is longer than previously thought [here longer than 4.6(1.5) h]
Summary
A future quantum technology, wherein stored quantum information is communicated over a quantum network, will necessarily involve both matter-based qubits and optical photons. The ideal silicon spin-photon interface would be a natively integrated optical center that possesses a longlived spin, a large transition dipole moment, and a high radiative efficiency. In this work we demonstrate that singly ionized deep chalcogen donors in silicon possess a strong light-matter interaction, which is suitable for strong coupling to silicon photonic cavities at the singlespin level. This offers a clear path toward chalcogen-based integrated silicon quantum optoelectronics. The identification of singly ionized chalcogen donors as a promising spin-photon interface in silicon was made only relatively recently [31], and bounds on some key spin and optical parameters of 77Se+ were determined to support this proposal. The allowed magnetic resonance transitions from the singlet state S0 to the triplet states T−, T0, T+ support long-lived qubits [31], across the S0 ⇔ T0 transition, which is a “clock transition” [32] at zero field
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