Abstract
The Polarity Dependent Memory and Switching effect (PDMS) has been observed in sandwiches of metal/a-Si/ITO layers and metal/a-Si/In. The film composition has been analysed by Auger Electron Spectroscopy and peak heights of the metals, Si and SiO x have been measured as a function of film depth. No penetration of electrode material into the a-Si film was observed and the interfaces were abrupt even after many cycles of switching. A mechanism based on dendrite formation does not therefore operate in this type of PDMS. Traces of SiO x have been found at the ITO/a-Si interface which are attributed to the presence of ITO or the deposition of In after exposure of a-Si to air. The SiO x layer appears only in the OFF state and not in the ON state of the device. Hence a model based on voltage formation and destruction of an approximately 500 Å thick SiO x layer at the a-Si/ITO interface is given.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
