Characterization of the Metallization Induced Recombination Losses in Industrial Silicon Solar Cells

Abstract

Screen printing is the dominant technique for contact formation of industrial high-efficiency crystalline silicon solar cells. Accurately quantify the metallization induced recombination losses of the metal contacts (J 0c ) remain a hot topic. We present a comprehensive analysis of the J 0c at the metal-Si interface as a function of the finger width and firing temperature. The dimension-dependent J 0c properties are investigated and possible explanations are discussed. By extracting J 0c directly from finished solar cells, it opens up the opportunity to quantify the contact recombination property in a fast and efficient manner, since no specially prepared midstream structures will be required for the analysis.