Abstract
We have investigated the magnetization reversal of fabricated Co/Pt nanomagnets with perpendicular anisotropy within a wide range of magnetic field pulse widths. This experiment covers the pulse lengths from 700 ms to 20 ns. We observed that the commonly used Arrhenius model fits very well the experimental data with a single parameter set for pulse times above 100 ns (tp > 100 ns). However, below 100 ns (tp < 100 ns), a steep increase of the switching field amplitude is observed and the deviation from the Arrhenius model becomes unacceptable. For short pulse times the model can be adjusted by the reversal time term for the dynamic switching field which is only dependent on the pulse amplitude and not on temperature anymore. Precise modeling of the magnetization reversal in the sub-100 ns-range is crucially important to ensure reliable operation in the favored GHz-range as well as to explore and design new kinds of Nanomagnetic Logic circuits and architectures.
Highlights
Logic operations are carried out by the magnetic field coupling
For short pulse times the model can be adjusted by the reversal time term for the dynamic switching field which is only dependent on the pulse amplitude and not on temperature anymore
The results showed the same important trend, it can be stated that extensive characterization of one magnet correctly represents magnetization reversal of nanomagnets, realized in the current Co/Pt pNML technology
Summary
Logic operations are carried out by the magnetic field coupling. The 3D nature of the magnetic stray field allows to situate the magnets in all three directions without any interconnections. This is a great advantage over CMOS where the metalization layers for contacting and interconnecting transistors hardly scale and more than ten of such layers are required in a state-of-the-art CMOS processor.[6] The feasibility of 3D monolithic integration of pNML has been demonstrated experimentally in recent years. Beside the magnetic via which allows signal routing between the different functional layers[7] in all three dimensions the computing in 3D was proven by a fully functional manufactured 3D majority logic gate.[8] The ability to avoid interconnections and 3D stacking of functional layers allows ultra-large scale integration of logic devices on a single die
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