Characterization of the iron and nickel impurities in gaas0.6p0.4

Abstract

Characterization of nickel and iron impurity centers in GaAs0.6P0.4 has been made using the technique of capacitance transients on reverse biased zinc-diffused p+n diodes. Both the nickel and iron levels have been identified by thermal hole emission having activation energies of 0.3eV and 0.58eV, respectively. Relative photoresponse measurements resulted in a threshold for optical hole emission of 0.3eV and 0.58eV, therefore, confirming the thermal hole emission measurements. Capture studies for nickel and iron centers indicated a relatively large capture cross-section and a strong electric field dependence.