Abstract
The shape of the hot electron distribution function in semiconductor devices is insufficiently described using only the first four moments. We propose using six moments of the distribution function to obtain a more accurate description of hot carrier phenomena. An analytic expression for the symmetric part of the distribution function as a function of the even moments is given which shows good agreement with Monte Carlo data for both the bulk case and inside n+−n−n+ test structures. The influence of the band structure on the parameters of the distribution function is studied and proven to be of importance for an accurate description.
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