Abstract
Semi-insulating Fe-doped InP wafers have been studied by a spatially resolved photocurrent technique. The photocurrent fluctuations are interpreted on the basis of either N D −N A or [ Fe +3] variations, resulting in non-homogeneous electric local compensation, owing to local variations in either the total electrically active Fe concentration or the net donor concentration. Growth striations are revealed, showing differences in the local photocurrent fluctuation at different parts of the wafers, these being barely observable in the wafer edge.
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