Abstract
In a high efficiency CIGS solar cell, we observed a MoSe 2 layer at the interface by SIMS, TEM and X-ray diffraction. MoSe 2 had a layer structure and the layers were oriented perpendicular to the Mo layer. The MoSe 2 contributes to the improvement of adhesion at the CIGS/Mo interface. The effects of the MoSe 2 layer on the electrical and photovoltaic properties of CIGS solar cells were investigated. The CIGS/Mo heterocontact, including the MoSe 2 layer, is not Schottky-type, but a favorable ohmic-type by the evaluation of dark I– V measurement at low temperature. A characteristic peak at 870 nm is observed in the differential quantum efficiency of a solar cell with a CIGS thickness of 500 nm. This peak relates to the absorption of the MoSe 2 layer. The band gap of MoSe 2 is calculated to be 1.41 eV from the absorption peak.
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