Abstract
An Accelerator SIMS facility has been set up at PSI/ETH Zurich. The apparatus and some special measuring techniques are discussed. Measurements of depth profiles of 1 MeV implantations are used for the determination of detection limits of trace elements in silicon. The depth profiles show a dynamic range of about three orders of magnitude. However, within a depth of 3 μm the count rates do generally not go down to the level of a pure Si bulk sample. In bulk analysis, detection limits are in the low ppb range for P, Ni and Cu, and even below for Sb and Al. Fe is still detected at a concentration of approx. 0.2 ppm even in pure samples, indicating a persistant contamination problem.
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