Abstract
Tb and Sm cations binary co-doped ceria films were deposited using the ultrasonic atomizing spray pyrolysis method. The crack-free homogenous films with different dopant concentration were deposited and thereafter annealed at fixed temperatures 900, 1200 and 1300 °C, respectively. The Ce0.9Sm0.1-xTbxO2-δ films formed were analyzed using X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscopy, atomic force microscopy and four probe dc technique. It was demonstrated that several microstructural parameters of oxide films are controlled by the sintering temperature and Tb dopant ions. Electrical properties like activation energies of ionic and electronic conductivity of the Ce0.9Sm0.1-xTbxO2-δ films were also influenced by the film composition.
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