Abstract
A hexavalent chromium-sensitive EMIS sensor (electrolyte membrane insulator semiconductor sensor) is prepared by deposition of a tributylphosphate (TBP) ionophore-containing siloprene membrane on a Si/SiO 2/Si 3N 4 structure. The developed EMIS sensor was studied by means of impedance spectroscopy, capacitance–voltage, X-ray photoelectron spectrometry and FT-IR spectroscopy. From the flat-band shift of the EMIS structure, the nersntian response to the anionic species Cr 2O 7 − was demonstrated. The linear range of detection is 10 − 4 M to 10 − 1 M and the detection limit is 10 − 5 M. Sulfate and chloride anions are shown not to be interfering whereas carbonate ions present a pK pot equal to 0.19.
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