Abstract
Sputtered tantalum oxynitride thin films on silicon substrates have been studied for use as high-temperature strain gauges. Thin-film depositions have been carried out by r.f. reactive magnetron sputtering in an argon-nitrogen-oxygen atmosphere. A cermet structure, tantalum oxide dielectric islands embedded in a tantalum nitride metallic matrix, has been identified in the sputtered thin films. Tantalum oxynitride thin films with a linear gauge factor (GF ≈ 3), high electrical resistivity (ϱ ≈ 400–1000 μΩ cm) and TCR<500 ppm °C have been obtained. Because of their high resistivity, these cermet thin films may allow high-temperature pressure sensor miniaturization.
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