Abstract
AbstractA binary Ta–Ti thin film composition‐spread materials library is prepared through magnetron sputter co‐deposition. An automated microelectrochemical investigation on selected surface areas, corresponding to a concentration gradient of Ti varying from 0.5 to 36 at %, is achieved by using a scanning droplet cell. Simultaneously, during the anodic oxide growth, a small alternating current (AC) voltage is superimposed on the increasing direct current (DC) potential in order to record the capacitance of the mixed‐metal oxide by using alternating current linear sweep voltammetry (AC‐LSV). Valve metal behavior, with the current stabilizing after an initial rapid increase, is found for all investigated compositions. AC‐LSV allows the ratio of the formation factor to the relative permittivity for different compositions to be calculated.
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