Abstract
The illumination intensity dependence on the effective lifetimes of silicon wafers with SiO 2 passivation layers is measured. A chopped CW-YAG laser light of up to 877 mW/cm 2 is used to accurately measure the effective lifetimes. Also, the density of interface traps of the corresponding wafers is measured, and the SRH model is used to analyze the obtained dependence of surface recombination velocity on excess carrier concentration. The fitting analysis shows that the hole capture cross-section strongly depends on the conduction type and preparation conditions. In contrast, the electron capture cross-section remains the same, regardless of the conduction type or sample preparation conditions.
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