Abstract
Si surface potential and strain at the Si–SiO2 structure with a thermally grown or a native SiO2 ultrathin film have been characterized by photoreflectance (PR) spectroscopy. The surface potentials of Si–SiO2 structures are determined from the modulation light intensity dependence of the PR signal intensity. Although the signal intensity decreases drastically with increasing SiO2 film thickness, it can be increased by applying dc bias voltage and increasing the surface potential of Si. The strains at the Si surface have been obtained by an analysis of the transition energy shift in the SiO2/Si structure with a thermally oxidized ultrathin film.
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