Abstract
Surface microroughness of various Si(100) wafers was detected and characterized by a 180° backscattering Rayleigh–Brillouin scattering spectrometer (RBSS), and measured by an atomic force microscopy (AFM). The intensity of the scattered light from the wafers is found to increase with increasing surface microroughness which was measured by AFM. By scanning across the wafer, the inhomogeneous distribution of surface microroughness is detected and characterized. The system can be easily developed into a mapping technique. The results of the surface microroughness detected by AFM and RBSS suggest that they are complementary for the characterization of the surface microroughness from a microarea to a whole wafer.
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