Abstract
Simultaneous thermal oxidation and nitridation technique was utilized to transform sputtered Zr to stoichiometric ZrO2 thin films on Si substrate. The stoichiometry of this type of oxide has high dielectric constant value of ~25 may be applied as dielectric in metal-oxide-semiconductor-based power devices. Through nitrous oxide gas environment, the oxidation/nitridation process was performed at 700°C for a set of time of 5–20 min. Chemical properties of the fabricated films have been characterized by angle-resolved x-ray photoelectron spectrometer. From the characterization, it was found that stoichiometric Zr-O (ZrO2) was formed. Nitrogen content in the samples was investigated. It was identified that sample oxidized/nitrided for 15 min gives the highest atomic percentage of nitrogen of 2.64 at% in the interfacial layer. This nitrogen content in the near interface region may help to passivate the Si dangling bonds, which may thus enhance the interface quality of oxide-semiconductor.
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