Abstract
Fluorine-doped silicon oxide (SiOF) film prepared by biased helicon plasma chemical vapor deposition with SiF4 and O2 is characterized. In this characterization, the SiOF film is compared with that prepared using a nonbiased plasma. SiOF films prepared using a biased plasma are stable in air. Whereas films prepared using a nonbiased plasma are not stable in air and the relative dielectric constant and stress vary in the ranges 3.2 to 3.5 and from -35 MPa to 0 MPa, respectively. Analysis Fourier transform infrared (FT-IR) and thermal desorption mass spectroscopy (TDS) spectra, clarifies the following. (1) Si-F bonds are formed in SiOF films prepared using a biased plasma. (2) Not only Si-F bonds but also F-Si-F bonds are formed in SiOF films prepared using a nonbiased plasma. (3) The F-Si-F bond structure formed in SiOF films absorbs water easily.
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