Abstract
This paper discusses several structural, electrical and oxidation characteristics of co-sputtered Ta–Ru alloy films on oxidized Si substrates. From X-ray examination, the Ta 1Ru 1 phase has formed and dominates in the compositions exceeding 54 at.% Ru content. The resistivity of the Ta–Ru thin films can reach a maximum of ∼320 μΩ-cm in the composition range between 35 and 54 at.% Ru. After thermal treatment in air (600°C, 1 h), Ru-rich samples show a lesser increase in resistivity than Ta-rich ones. The observed preferential oxidation of Ta in the Ta–Ru samples can be further interpreted by thermodynamic calculations. The Ta-rich surface oxide is believed to be responsible for the passivating ability of the Ru atom towards oxidation at high temperatures. This results in the Ru of the metallic state although the oxidation of Ta occurs. Finally, the Ta–Ru thin films without any additional passivation were fabricated in heater arrays to perform the ink-jet lifetime test. A lifetime over 1×10 7 driving pulses can be achieved, which indicates Ta–Ru has high potential in thermal ink-jet applications.
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