Abstract
Samarium cobalt films were prepared on silicon substrates with and without a chromium buffer layer at room temperature and 600°C using direct current unbalanced magnetron sputtering. For obtaining ideal magnetic properties, the films should be free from impurities, such as O, Al and others. Rutherford backscattering spectrometry and heavy ion elastic recoil detection analysis were used to determine the composition and film thickness and to monitor the light element contamination across film thickness. X-ray diffractometer and superconducting quantum interference device were employed to characterize the structure and magnetic properties of the films, respectively. The results obtained led to an improved design of the ground shield and the use of a sorption pump to effectively minimize aluminium and oxygen concentration in the films, respectively.
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