Abstract
Ferroelectric Bi4Ti3O12 (BIT) and Bi4-xLaxTi3O12(BLT) (x=0.25, 0.5, 0.75) films were prepared on Pt/Ti/SiO2 substrates by the sol-gel technique. The P–E hysteresis loop, whose squareness was enhanced more than that of a BIT film's, was obtained for a BLT film with a La composition of 0.75 annealed at 650°C or higher temperatures. A remanent polarization of 13 µC/cm2 and a coercive electric field of 80 kV/cm were obtained. Raman scattering measurements reveal that the crystallization temperature at which a perovskite structure forms decreased with increasing La content. In addition, it is shown that the crystallization process depends on the La content.
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