Abstract
Silicon on insulator structures prepared using separation by implanted oxygen technology are studied by means of Brillouin light scattering. The deviation in the experimental wave velocity for shear horizontal modes guided within the SiO2 buried layer is ascribed to the presence of silicon inclusions dispersed in the oxide matrix. Transmission electron microscopy (TEM) observations support this assumption.A model describing the effect of the silicon inclusions by means of an effective medium theory based on the Eshelby method is presented. The inclusion volume fraction is determined and compared with the TEM estimate.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
