Abstract
Thin epitaxial CdTe films were grown on CdTe(111)B substrates by the close-spaced sublimation (CSS) technique and were characterized over a range of experimental parameters. The source temperature was varied between 480°C and 540°C, maintaining an average constant source-substrate temperature difference ΔT of ∼130°C. Helium was used as a carrier gas at pressures between 2 Torr and 10 Torr. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to analyze the film morphology and structure. Growth rates ranging from 1 μm/h to 4 μm/h were observed, based on profilometer thickness measurements. The addition of a pre-growth heat treatment step and post-growth annealing treatment resulted in smooth CdTe(111) films. An evolution in growth morphology was demonstrated with SEM images and film quality was confirmed with XRD.
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