Characterization of SiON/InP MOS structure with sulfidation, fluorination, and hydrogenation

Abstract

Liquid phase deposited SiON film on InP with (NH4)2S treatment shows superior electrical characteristics due to the reduction of native oxides and sulfur passiva- tion. Simultaneously, HF in SiON liquid phase deposition solution can effectively reduce residual native oxides on InP and provide fluorine passivation in SiON/InP film and in- terface. With post-metallization annealing (PMA), hydrogen ions can further passivate defects in SiON/InP film and inter- face. With these treatments, the PMA-LPD-SiON/(NH4)2S- treated InP MOS structure shows excellent electrical char- acteristics. With the physical thickness of 5.4 nm, the leak- age current densities can be as low as 1.25 × 10 −7 and 6.24 × 10 −7 A/cm 2 at ±2 V, and the interface state density is 3.25 × 10 11 cm −2 eV −1 .