Abstract
The characteristics of SiC MOSFETs (drain current vs. gate voltage) were measured at 0.14−350 K and analyzed considering variable-range hopping conduction through interface states. The total interface state density was determined to be 5.4×1012 cm−2 from the additional shift in the threshold gate voltage with a temperature change. The wave-function size of interface states was determined from the temperature dependence of the measured hopping current and was comparable to the theoretical value. The channel mobility was approximately 100 cm2V−1s−1 and was almost independent of temperature.
Highlights
SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) are in practical use in high-power applications, they still suffer from low channel conductivity.[1]
A large number of SiO2/SiC interface states has been assumed to be the primary cause of poor channel conductivity, because interface states reduce the number of conduction electrons by trapping them and reduce the channel mobility
We show that variable-range hopping (VRH)[14,15] is dominant at low temperature (T < ∼50 K) in the subthreshold region, and revised Dit is determined by an analytical model that considers VRH
Summary
SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) are in practical use in high-power applications, they still suffer from low channel conductivity.[1] Various processes, such as nitridation[2,3] or pyrogenic oxidation,[4,5,6] have been proposed to improve the channel conductivity. Even when these processes are used, the channel conductivity is still low, and the field-effect mobility can be lower than 100 cm2V 1s 1. The wave-function size of interface states was determined by analyzing temperature dependence of VRH current
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