Abstract
Rutherford backscattering (RBS) measurements, elastic recoil detection analysis (ERDA) and nuclear reaction analysis (NRA) were applied to determine the composition, the thickness and the density of plasma-deposited SiO x N y H z and SiN y H z layers on silicon substrate. RBS-measurements were carried out with 2.3 MeV 4He-ions in random and channeling geometry to determine the atomic ratios of N Si in the surface layers, and the layer thicknesses. Depth profiling for hydrogen in the samples was performed by means of α-ERDA using 2.3 or 2.9 MeV 4He-ions. In order to determine the atomic ratios of H N , heavy ion elastic recoil detection (HIERDA) using 32 MeV 28Si 7+-ions was applied. The oxygen contents were measured using the nuclear reaction 16O(d,p) 17O. Depth profiling for nitrogen was also performed by means of NRA using the reaction 14N(d,α) 12C. In addition, ellipsometric measurements of the layer thicknesses were utilized to determine the densities in absolute units (atoms/m 3 or kg/m 3).
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