Abstract
This letter reports on the mechanisms responsible for the operation of the original radiation sensor based on the floating gate (FG) principle. In contrast to known FG radiation sensors, the suggested device employs the CMOS inverter readout scheme and is implemented in a standard CMOS technology without additional masks. Single poly-FG sensor was charged both to positive and negative potentials and exposed to different types of radiation (Gamma-rays, X-rays, and UV). It is shown that the discharge is dominated by electrons activated from the FG and Si substrate. In contrast with other FG radiation sensors, the demonstrated device operates with zero voltage at the control gate. This allows significantly reduced power consumption and improved noise performance.
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