Abstract
Two different structures of single photon avalanche diode(SPAD) fabricated by 0.13 μm flash process technology are presented. The structure-1 uses low implanted p-well surrounding the active area as the guard ring which prevents the periphery breakdown, while for the structure-2, a virtual guard ring with the deep retrograde n-well doping is designed. The characteristics of the two detectors with the same active area diameter are presented. The two SPAD structures exhibit relatively different dark and light performance. The first structure exhibits a typical dark count rate of 18 kHz at the room temperature and a maximum photon detection efficiency of 15%, while the second structure exhibits a dark count rate of 23 kHz and a maximum photon detection efficiency of 28%. The comparison of the two structures is therefore promising for the further advanced SPAD design.
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