Abstract
Gallium oxide (Ga2O3) films have been deposited on SrTiO3 (100) substrates by using the metal-organic chemical vapor deposition (MOCVD) method. Post-deposition annealing was performed at different temperatures. XRD θ-2θ scans displayed that the annealing at 1000 °C leaded to β phase Ga2O3 film with the best crystalline quality. Microstructural and chemical composition analyses revealed that this film was single crystal β-Ga2O3 with stoichiometric ratio. The epitaxial relationships were clearly determined as β-Ga2O3 (100) || SrTiO3 (100) with β-Ga2O3 [001] || SrTiO3 <011>. All of the prepared Ga2O3 samples have average transmittances in the visible range of more than 70%.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
